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IGBT MODULE
CIRCUIT
Single 300A 1200V
OUTLINE DRAWING
PHMB300B12
Dimension(mm)
Approximate Weight : 650g
MAXMUM RATINGS (Tc=25C) Item
Collector-Emitter Voltage Gate - Emitter Voltage Collector Current DC 1 ms
Symbol
VCES VGES IC ICP PC Tj Tstg VISO FTOR M4
PHMB300B12
1200 +/ - 20 300 600 1600 -40 to +150 -40 to +125 2500 3 1.4 3
Unit
V V A W C C V N*m
Collector Power Dissipation Junction Temperature Range Storage Temperature Range Isolation Voltage Terminal to Base AC, 1 min.) Module Base to Heatsink Mounting Torque Bus Bar to Main Terminals
M6 Symbol
ICES IGES VCE(sat) VGE(th) Cies tr ton tf toff
ELECTRICAL CHARACTERISTICS (Tc=25C) Characteristic
Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Turn-on Time Switching Time Fall Time Turn-off Time
Test Condition
VCE=1200V,VGE=0V VGE=+/- 20V,VCE=0V IC=300A,VGE=15V VCE=5V,IC=300mA VCE=10V,VGE=0V,f=1MHz VCC= 600V RL= 2 ohm RG= 1.3 ohm VGE= +/- 15V
Min.
4.0 -
Typ.
1.9 25000 0.25 0.40 0.25 0.80
Max.
6.0 1.0 2.4 8.0 0.45 0.70 0.35 1.10
Unit mA A V V pF s
FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25C) Item Symbol Rated Value
Forward Current DC 1 ms IF IFM 300 600
Unit A Typ.
1.9 0.20
Characteristic
Peak Forward Voltage Reverse Recovery Time
Symbol
VF trr
Test Condition
IF=300A,VGE=0V IF=300A,VGE=-10V,di/dt=600A/s
Min.
-
Max.
2.4 0.30
Unit V s Unit C/W
THERMAL CHARACTERISTICS Characteristic
Thermal Impedance IGBT DIODE
Symbol
Rth(j-c)
Test Condition
Junction to Case
Min.
-
Typ.
-
Max.
0.086 0.16
PHMB300B12
Fig.1- Output Characteristics (Typical)
600
Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical)
TC=25
16
TC=25 IC=100A 600A
VGE=20V
500
12V
10V
15V
Collector to Emitter Voltage V CE (V)
14 12 10 8 6 4 2 0
300A
Collector Current I C (A)
400
9V
300
200
8V
100
7V
0 0 2 4 6 8 10
0
4
8
12
16
20
Collector to Emitter Voltage VCE (V)
Gate to Emitter Voltage VGE (V)
Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical)
16
Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical)
800 700 600 500 400 16
TC=125 IC=150A 600A
Collector to Emitter Voltage V CE (V)
Collector to Emitter Voltage V CE (V)
14
RL=2 TC=25
14
Gate to Emitter Voltage VGE (V)
300A
12 10 8 6 4 2 0
12 10 8
VCE=600V
300 6
400V
200 100 0 0 400 800 1200 1600 2000
200V
4 2 0 2400
0
4
8
12
16
20
Gate to Emitter Voltage VGE (V)
Total Gate Charge Qg (nC)
Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical)
100000 50000
Fig.6- Collector Current vs. Switching Time (Typical)
1.4 1.2
Cies
20000
VGE=0V f=1MHZ TC=25
VCC=600V RG=1.3 VGE=15V TC=25
Switching Time t (s)
Capacitance C (pF)
1 0.8 0.6 0.4 0.2
10000 5000 2000 1000 500 200 100 0.1 0.2 0.5 1 2 5 10 20 50 100 200
tOFF
Coes
tf
Cres
0
tON tr
0 50 100 150 200 250 300
Collector to Emitter Voltage VCE (V)
Collector Current IC (A)
PHMB300B12
Fig.8- Forward Characteristics of Free Wheeling Diode Fig.7- Series Gate Impedance vs. Switching Time (Typical)
10 5 600
(Typical)
TC=25 TC=125
VCC=600V IC=300A VGE=15V TC=25
500
toff ton
2 1 0.5
Forward Current I F (A)
50 100
Switching Time t (s)
400
tr
300
tf
0.2 0.1 0.05
200
100
0.5
1
2
5
10
20
0
0
1
2
3
4
Series Gate Impedance RG ()
Forward Voltage VF (V)
Fig.9- Reverse Recovery Characteristics (Typical)
1000 5000
Fig.10- Reverse Bias Safe Operating Area (Typical)
2000 1000 500
Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns)
500
IF=300A TC=25
RG=1.3 VGE=15V TC125
Collector Current I C (A)
200 100 50
trr
200 100 50 20 10
20
2 1 0.5 0.2
IRrM
10 5
0
600
1200
1800
2400
0.1
0
400
800
1200
1600
-di/dt (A/s)
Collector to Emitter Voltage V CE (V)
Fig.11- Transient Thermal Impedance
5x10 -1
(/W)
2x10 -1 1x10 -1 5x10
-2
FRD IGBT
Transient Thermal Impedance Rth
(J-C)
2x10 -2 1x10 -2 5x10 -3 2x10 -3 1x10 -3 5x10 -4 2x10
-4
TC=25 1 Shot Pulse
10 -4 10 -3 10 -2 10 -1 1 10 1
10 -5
Time t (s)

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